A high-throughput search for electronic materials-thin-film dielectrics

R. B. Van Dover, Lynn Schneemeyer, R. M. Fleming, H. A. Huggins

Research output: Contribution to journalArticleResearchpeer-review

19 Citations (Scopus)

Abstract

Parallel synthesis together with high-throughput screening was used to identify candidate materials for integrated circuit applications that demand a superior high permittivity dielectric thin film. Specifically, we developed a 'continuous-composition spread' (CCS) technique to synthesize much of a pseudoternary oxide system in a single deposition and used this in conjunction with a high-throughput measurement protocol, thereby allowing each chemical system to be deposited and evaluated in about 24 h. This approach led to the identification of compositions in the Zr-Sn-Ti-O system with promising properties. The same technique was used to determine the optimum compositions as a function of processing parameters. Films with the composition Zr.2Sn.2Ti.6O2 were then prepared using a conventional synthetic technique (on-axis sputtering) and were verified to have excellent properties. Thus, the CCS technique has demonstrated utility in rapidly identifying and developing a useful new material.

Original languageEnglish
Pages (from-to)217-225
Number of pages9
JournalBiotechnology and Bioengineering
Volume61
Issue number4
DOIs
StatePublished - 1 Jan 1998

Fingerprint

Oxides
Throughput
Thin films
Chemical analysis
Dielectric films
Sputtering
Integrated circuits
Screening
Permittivity
Processing

Keywords

  • Dielectric
  • Electronic
  • Film
  • Insulator

Cite this

Van Dover, R. B. ; Schneemeyer, Lynn ; Fleming, R. M. ; Huggins, H. A. / A high-throughput search for electronic materials-thin-film dielectrics. In: Biotechnology and Bioengineering. 1998 ; Vol. 61, No. 4. pp. 217-225.
@article{663dc0d4cd3c4f6f91222e3709004535,
title = "A high-throughput search for electronic materials-thin-film dielectrics",
abstract = "Parallel synthesis together with high-throughput screening was used to identify candidate materials for integrated circuit applications that demand a superior high permittivity dielectric thin film. Specifically, we developed a 'continuous-composition spread' (CCS) technique to synthesize much of a pseudoternary oxide system in a single deposition and used this in conjunction with a high-throughput measurement protocol, thereby allowing each chemical system to be deposited and evaluated in about 24 h. This approach led to the identification of compositions in the Zr-Sn-Ti-O system with promising properties. The same technique was used to determine the optimum compositions as a function of processing parameters. Films with the composition Zr.2Sn.2Ti.6O2 were then prepared using a conventional synthetic technique (on-axis sputtering) and were verified to have excellent properties. Thus, the CCS technique has demonstrated utility in rapidly identifying and developing a useful new material.",
keywords = "Dielectric, Electronic, Film, Insulator",
author = "{Van Dover}, {R. B.} and Lynn Schneemeyer and Fleming, {R. M.} and Huggins, {H. A.}",
year = "1998",
month = "1",
day = "1",
doi = "10.1002/(SICI)1097-0290(1998)61:4<217::AID-CC4>3.0.CO;2-L",
language = "English",
volume = "61",
pages = "217--225",
journal = "Biotechnology and Bioengineering",
issn = "0006-3592",
publisher = "Wiley-VCH Verlag",
number = "4",

}

A high-throughput search for electronic materials-thin-film dielectrics. / Van Dover, R. B.; Schneemeyer, Lynn; Fleming, R. M.; Huggins, H. A.

In: Biotechnology and Bioengineering, Vol. 61, No. 4, 01.01.1998, p. 217-225.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - A high-throughput search for electronic materials-thin-film dielectrics

AU - Van Dover, R. B.

AU - Schneemeyer, Lynn

AU - Fleming, R. M.

AU - Huggins, H. A.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Parallel synthesis together with high-throughput screening was used to identify candidate materials for integrated circuit applications that demand a superior high permittivity dielectric thin film. Specifically, we developed a 'continuous-composition spread' (CCS) technique to synthesize much of a pseudoternary oxide system in a single deposition and used this in conjunction with a high-throughput measurement protocol, thereby allowing each chemical system to be deposited and evaluated in about 24 h. This approach led to the identification of compositions in the Zr-Sn-Ti-O system with promising properties. The same technique was used to determine the optimum compositions as a function of processing parameters. Films with the composition Zr.2Sn.2Ti.6O2 were then prepared using a conventional synthetic technique (on-axis sputtering) and were verified to have excellent properties. Thus, the CCS technique has demonstrated utility in rapidly identifying and developing a useful new material.

AB - Parallel synthesis together with high-throughput screening was used to identify candidate materials for integrated circuit applications that demand a superior high permittivity dielectric thin film. Specifically, we developed a 'continuous-composition spread' (CCS) technique to synthesize much of a pseudoternary oxide system in a single deposition and used this in conjunction with a high-throughput measurement protocol, thereby allowing each chemical system to be deposited and evaluated in about 24 h. This approach led to the identification of compositions in the Zr-Sn-Ti-O system with promising properties. The same technique was used to determine the optimum compositions as a function of processing parameters. Films with the composition Zr.2Sn.2Ti.6O2 were then prepared using a conventional synthetic technique (on-axis sputtering) and were verified to have excellent properties. Thus, the CCS technique has demonstrated utility in rapidly identifying and developing a useful new material.

KW - Dielectric

KW - Electronic

KW - Film

KW - Insulator

UR - http://www.scopus.com/inward/record.url?scp=0032323097&partnerID=8YFLogxK

U2 - 10.1002/(SICI)1097-0290(1998)61:4<217::AID-CC4>3.0.CO;2-L

DO - 10.1002/(SICI)1097-0290(1998)61:4<217::AID-CC4>3.0.CO;2-L

M3 - Article

VL - 61

SP - 217

EP - 225

JO - Biotechnology and Bioengineering

JF - Biotechnology and Bioengineering

SN - 0006-3592

IS - 4

ER -