Advanced amorphous dielectrics for embedded capacitors

G. B. Alers, R. B. van Dover, Lynn Schneemeyer, L. Stirling, C. Y. Sung, P. W. Diodato, R. Liu, Y. H. Wong, R. M. Fleming, D. V. Lang, J. P. Chang

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

New classes of high dielectric constant materials based on binary and ternary amorphous metal oxides will be discussed. These films are compatible with low temperature processing within the metal layers of a circuit and can therefore be used with conventional metal electrodes like TiN. Different classes of mixed metal oxides will be discussed that are based on alloys of tantalum oxide and titanium oxide.

Original languageEnglish
Pages (from-to)797-800
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1 Dec 1999
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 5 Dec 19998 Dec 1999

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metal oxides
capacitors
Capacitors
Metals
tantalum oxides
mixed oxides
titanium oxides
metals
Oxides
Tantalum oxides
permittivity
electrodes
oxides
Titanium oxides
Permittivity
Electrodes
Networks (circuits)
Processing
Temperature

Cite this

Alers, G. B., van Dover, R. B., Schneemeyer, L., Stirling, L., Sung, C. Y., Diodato, P. W., ... Chang, J. P. (1999). Advanced amorphous dielectrics for embedded capacitors. Technical Digest - International Electron Devices Meeting, 797-800.
Alers, G. B. ; van Dover, R. B. ; Schneemeyer, Lynn ; Stirling, L. ; Sung, C. Y. ; Diodato, P. W. ; Liu, R. ; Wong, Y. H. ; Fleming, R. M. ; Lang, D. V. ; Chang, J. P. / Advanced amorphous dielectrics for embedded capacitors. In: Technical Digest - International Electron Devices Meeting. 1999 ; pp. 797-800.
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author = "Alers, {G. B.} and {van Dover}, {R. B.} and Lynn Schneemeyer and L. Stirling and Sung, {C. Y.} and Diodato, {P. W.} and R. Liu and Wong, {Y. H.} and Fleming, {R. M.} and Lang, {D. V.} and Chang, {J. P.}",
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Alers, GB, van Dover, RB, Schneemeyer, L, Stirling, L, Sung, CY, Diodato, PW, Liu, R, Wong, YH, Fleming, RM, Lang, DV & Chang, JP 1999, 'Advanced amorphous dielectrics for embedded capacitors', Technical Digest - International Electron Devices Meeting, pp. 797-800.

Advanced amorphous dielectrics for embedded capacitors. / Alers, G. B.; van Dover, R. B.; Schneemeyer, Lynn; Stirling, L.; Sung, C. Y.; Diodato, P. W.; Liu, R.; Wong, Y. H.; Fleming, R. M.; Lang, D. V.; Chang, J. P.

In: Technical Digest - International Electron Devices Meeting, 01.12.1999, p. 797-800.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Advanced amorphous dielectrics for embedded capacitors

AU - Alers, G. B.

AU - van Dover, R. B.

AU - Schneemeyer, Lynn

AU - Stirling, L.

AU - Sung, C. Y.

AU - Diodato, P. W.

AU - Liu, R.

AU - Wong, Y. H.

AU - Fleming, R. M.

AU - Lang, D. V.

AU - Chang, J. P.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - New classes of high dielectric constant materials based on binary and ternary amorphous metal oxides will be discussed. These films are compatible with low temperature processing within the metal layers of a circuit and can therefore be used with conventional metal electrodes like TiN. Different classes of mixed metal oxides will be discussed that are based on alloys of tantalum oxide and titanium oxide.

AB - New classes of high dielectric constant materials based on binary and ternary amorphous metal oxides will be discussed. These films are compatible with low temperature processing within the metal layers of a circuit and can therefore be used with conventional metal electrodes like TiN. Different classes of mixed metal oxides will be discussed that are based on alloys of tantalum oxide and titanium oxide.

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JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

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Alers GB, van Dover RB, Schneemeyer L, Stirling L, Sung CY, Diodato PW et al. Advanced amorphous dielectrics for embedded capacitors. Technical Digest - International Electron Devices Meeting. 1999 Dec 1;797-800.