Abstract
New classes of high dielectric constant materials based on binary and ternary amorphous metal oxides will be discussed. These films are compatible with low temperature processing within the metal layers of a circuit and can therefore be used with conventional metal electrodes like TiN. Different classes of mixed metal oxides will be discussed that are based on alloys of tantalum oxide and titanium oxide.
| Original language | English |
|---|---|
| Pages (from-to) | 797-800 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| State | Published - 1 Dec 1999 |
| Event | 1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: 5 Dec 1999 → 8 Dec 1999 |
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Advanced amorphous dielectrics for embedded capacitors. / Alers, G. B.; van Dover, R. B.; Schneemeyer, Lynn; Stirling, L.; Sung, C. Y.; Diodato, P. W.; Liu, R.; Wong, Y. H.; Fleming, R. M.; Lang, D. V.; Chang, J. P.
In: Technical Digest - International Electron Devices Meeting, 01.12.1999, p. 797-800.Research output: Contribution to journal › Conference article › Research › peer-review
TY - JOUR
T1 - Advanced amorphous dielectrics for embedded capacitors
AU - Alers, G. B.
AU - van Dover, R. B.
AU - Schneemeyer, Lynn
AU - Stirling, L.
AU - Sung, C. Y.
AU - Diodato, P. W.
AU - Liu, R.
AU - Wong, Y. H.
AU - Fleming, R. M.
AU - Lang, D. V.
AU - Chang, J. P.
PY - 1999/12/1
Y1 - 1999/12/1
N2 - New classes of high dielectric constant materials based on binary and ternary amorphous metal oxides will be discussed. These films are compatible with low temperature processing within the metal layers of a circuit and can therefore be used with conventional metal electrodes like TiN. Different classes of mixed metal oxides will be discussed that are based on alloys of tantalum oxide and titanium oxide.
AB - New classes of high dielectric constant materials based on binary and ternary amorphous metal oxides will be discussed. These films are compatible with low temperature processing within the metal layers of a circuit and can therefore be used with conventional metal electrodes like TiN. Different classes of mixed metal oxides will be discussed that are based on alloys of tantalum oxide and titanium oxide.
UR - http://www.scopus.com/inward/record.url?scp=17544399812&partnerID=8YFLogxK
M3 - Conference article
SP - 797
EP - 800
JO - Technical Digest - International Electron Devices Meeting
JF - Technical Digest - International Electron Devices Meeting
SN - 0163-1918
ER -