Advanced amorphous dielectrics for embedded capacitors

G. B. Alers; R. B. van Dover; L. F. Schneemeyer; L. Stirling; C. Y. Sung; P. W. Diodato; R. Liu; Y. H. Wong; R. M. Fleming; D. V. Lang; J. P. Chang

Advanced amorphous dielectrics for embedded capacitors

G. B. Alers, R. B. van Dover, L. F. Schneemeyer, L. Stirling, C. Y. Sung, P. W. Diodato, R. Liu, Y. H. Wong, R. M. Fleming, D. V. Lang, J. P. Chang

Chemistry and Biochemistry

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

New classes of high dielectric constant materials based on binary and ternary amorphous metal oxides will be discussed. These films are compatible with low temperature processing within the metal layers of a circuit and can therefore be used with conventional metal electrodes like TiN. Different classes of mixed metal oxides will be discussed that are based on alloys of tantalum oxide and titanium oxide.

Original language	English
Pages (from-to)	797-800
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1 Dec 1999
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: 5 Dec 1999 → 8 Dec 1999

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@article{3d78e3ba6b2047998516979047b653ab,

title = "Advanced amorphous dielectrics for embedded capacitors",

abstract = "New classes of high dielectric constant materials based on binary and ternary amorphous metal oxides will be discussed. These films are compatible with low temperature processing within the metal layers of a circuit and can therefore be used with conventional metal electrodes like TiN. Different classes of mixed metal oxides will be discussed that are based on alloys of tantalum oxide and titanium oxide.",

author = "Alers, {G. B.} and {van Dover}, {R. B.} and Schneemeyer, {L. F.} and L. Stirling and Sung, {C. Y.} and Diodato, {P. W.} and R. Liu and Wong, {Y. H.} and Fleming, {R. M.} and Lang, {D. V.} and Chang, {J. P.}",

year = "1999",

month = dec,

day = "1",

language = "English",

pages = "797--800",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 05-12-1999 Through 08-12-1999",

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Advanced amorphous dielectrics for embedded capacitors. / Alers, G. B.; van Dover, R. B.; Schneemeyer, L. F.; Stirling, L.; Sung, C. Y.; Diodato, P. W.; Liu, R.; Wong, Y. H.; Fleming, R. M.; Lang, D. V.; Chang, J. P.

In: Technical Digest - International Electron Devices Meeting, 01.12.1999, p. 797-800.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Advanced amorphous dielectrics for embedded capacitors

AU - Alers, G. B.

AU - van Dover, R. B.

AU - Schneemeyer, L. F.

AU - Stirling, L.

AU - Sung, C. Y.

AU - Diodato, P. W.

AU - Liu, R.

AU - Wong, Y. H.

AU - Fleming, R. M.

AU - Lang, D. V.

AU - Chang, J. P.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - New classes of high dielectric constant materials based on binary and ternary amorphous metal oxides will be discussed. These films are compatible with low temperature processing within the metal layers of a circuit and can therefore be used with conventional metal electrodes like TiN. Different classes of mixed metal oxides will be discussed that are based on alloys of tantalum oxide and titanium oxide.

AB - New classes of high dielectric constant materials based on binary and ternary amorphous metal oxides will be discussed. These films are compatible with low temperature processing within the metal layers of a circuit and can therefore be used with conventional metal electrodes like TiN. Different classes of mixed metal oxides will be discussed that are based on alloys of tantalum oxide and titanium oxide.

UR - http://www.scopus.com/inward/record.url?scp=17544399812&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:17544399812

SP - 797

EP - 800

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

Y2 - 5 December 1999 through 8 December 1999

ER -