Advanced amorphous dielectrics for embedded capacitors

G. B. Alers, R. B. van Dover, L. F. Schneemeyer, L. Stirling, C. Y. Sung, P. W. Diodato, R. Liu, Y. H. Wong, R. M. Fleming, D. V. Lang, J. P. Chang

Research output: Contribution to journalConference article

8 Scopus citations

Abstract

New classes of high dielectric constant materials based on binary and ternary amorphous metal oxides will be discussed. These films are compatible with low temperature processing within the metal layers of a circuit and can therefore be used with conventional metal electrodes like TiN. Different classes of mixed metal oxides will be discussed that are based on alloys of tantalum oxide and titanium oxide.

Original languageEnglish
Pages (from-to)797-800
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1 Dec 1999
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 5 Dec 19998 Dec 1999

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