Advanced dielectrics for gate oxide, DRAM and rf capacitors

R. B. van Dover, R. M. Fleming, L. F. Schneemeyer, G. B. Alers, D. J. Werder

Research output: Contribution to journalConference article

33 Scopus citations

Abstract

A new class of high dielectric constant materials is presented based on binary and ternary amorphous metal oxides. These films are compatible with low temperature processing and can be used with conventional metal electrodes like TiN. Metal alloys of both Tantalum oxide and titanium oxide will be discussed with dielectric constants as high as 62 and leakage currents of less than 10-8 A/cm2 at IMV/cm.

Original languageEnglish
Pages (from-to)823-828
Number of pages6
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1 Dec 1998
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 6 Dec 19989 Dec 1998

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