Advanced dielectrics for gate oxide, DRAM and rf capacitors

R. B. van Dover; R. M. Fleming; L. F. Schneemeyer; G. B. Alers; D. J. Werder

Advanced dielectrics for gate oxide, DRAM and rf capacitors

R. B. van Dover, R. M. Fleming, L. F. Schneemeyer, G. B. Alers, D. J. Werder

Chemistry and Biochemistry

Research output: Contribution to journal › Conference article › peer-review

38 Scopus citations

Abstract

A new class of high dielectric constant materials is presented based on binary and ternary amorphous metal oxides. These films are compatible with low temperature processing and can be used with conventional metal electrodes like TiN. Metal alloys of both Tantalum oxide and titanium oxide will be discussed with dielectric constants as high as 62 and leakage currents of less than 10^-8 A/cm² at IMV/cm.

Original language	English
Pages (from-to)	823-828
Number of pages	6
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1998
Event	Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 6 Dec 1998 → 9 Dec 1998

Cite this

@article{428487a7a06b401485df0d829126315c,

title = "Advanced dielectrics for gate oxide, DRAM and rf capacitors",

abstract = "A new class of high dielectric constant materials is presented based on binary and ternary amorphous metal oxides. These films are compatible with low temperature processing and can be used with conventional metal electrodes like TiN. Metal alloys of both Tantalum oxide and titanium oxide will be discussed with dielectric constants as high as 62 and leakage currents of less than 10-8 A/cm2 at IMV/cm.",

author = "{van Dover}, {R. B.} and Fleming, {R. M.} and Schneemeyer, {L. F.} and Alers, {G. B.} and Werder, {D. J.}",

year = "1998",

language = "English",

pages = "823--828",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 IEEE International Electron Devices Meeting ; Conference date: 06-12-1998 Through 09-12-1998",

}

TY - JOUR

T1 - Advanced dielectrics for gate oxide, DRAM and rf capacitors

AU - van Dover, R. B.

AU - Fleming, R. M.

AU - Schneemeyer, L. F.

AU - Alers, G. B.

AU - Werder, D. J.

PY - 1998

Y1 - 1998

N2 - A new class of high dielectric constant materials is presented based on binary and ternary amorphous metal oxides. These films are compatible with low temperature processing and can be used with conventional metal electrodes like TiN. Metal alloys of both Tantalum oxide and titanium oxide will be discussed with dielectric constants as high as 62 and leakage currents of less than 10-8 A/cm2 at IMV/cm.

AB - A new class of high dielectric constant materials is presented based on binary and ternary amorphous metal oxides. These films are compatible with low temperature processing and can be used with conventional metal electrodes like TiN. Metal alloys of both Tantalum oxide and titanium oxide will be discussed with dielectric constants as high as 62 and leakage currents of less than 10-8 A/cm2 at IMV/cm.

UR - http://www.scopus.com/inward/record.url?scp=0032254848&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032254848

SN - 0163-1918

SP - 823

EP - 828

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1998 IEEE International Electron Devices Meeting

Y2 - 6 December 1998 through 9 December 1998

ER -

Advanced dielectrics for gate oxide, DRAM and rf capacitors

Abstract

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