Advanced dielectrics for gate oxide, DRAM and rf capacitors

R. B. van Dover, R. M. Fleming, Lynn Schneemeyer, G. B. Alers, D. J. Werder

Research output: Contribution to journalConference articleResearchpeer-review

32 Citations (Scopus)

Abstract

A new class of high dielectric constant materials is presented based on binary and ternary amorphous metal oxides. These films are compatible with low temperature processing and can be used with conventional metal electrodes like TiN. Metal alloys of both Tantalum oxide and titanium oxide will be discussed with dielectric constants as high as 62 and leakage currents of less than 10-8 A/cm2 at IMV/cm.

Original languageEnglish
Pages (from-to)823-828
Number of pages6
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1 Dec 1998
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 6 Dec 19989 Dec 1998

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Dynamic random access storage
Oxides
capacitors
Capacitors
Metals
permittivity
tantalum oxides
oxides
Permittivity
titanium oxides
metals
Tantalum oxides
metal oxides
leakage
Titanium oxides
Leakage currents
electrodes
Electrodes
Processing
Temperature

Cite this

van Dover, R. B. ; Fleming, R. M. ; Schneemeyer, Lynn ; Alers, G. B. ; Werder, D. J. / Advanced dielectrics for gate oxide, DRAM and rf capacitors. In: Technical Digest - International Electron Devices Meeting. 1998 ; pp. 823-828.
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Advanced dielectrics for gate oxide, DRAM and rf capacitors. / van Dover, R. B.; Fleming, R. M.; Schneemeyer, Lynn; Alers, G. B.; Werder, D. J.

In: Technical Digest - International Electron Devices Meeting, 01.12.1998, p. 823-828.

Research output: Contribution to journalConference articleResearchpeer-review

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T1 - Advanced dielectrics for gate oxide, DRAM and rf capacitors

AU - van Dover, R. B.

AU - Fleming, R. M.

AU - Schneemeyer, Lynn

AU - Alers, G. B.

AU - Werder, D. J.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - A new class of high dielectric constant materials is presented based on binary and ternary amorphous metal oxides. These films are compatible with low temperature processing and can be used with conventional metal electrodes like TiN. Metal alloys of both Tantalum oxide and titanium oxide will be discussed with dielectric constants as high as 62 and leakage currents of less than 10-8 A/cm2 at IMV/cm.

AB - A new class of high dielectric constant materials is presented based on binary and ternary amorphous metal oxides. These films are compatible with low temperature processing and can be used with conventional metal electrodes like TiN. Metal alloys of both Tantalum oxide and titanium oxide will be discussed with dielectric constants as high as 62 and leakage currents of less than 10-8 A/cm2 at IMV/cm.

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JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

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