Characterizing and understanding the photovoltage in n-Si/Au light-addressable electrochemical sensors

Armeen Hussain; Kayla Mancini; Yousef Khatib; Glen D. O'Neil

doi:10.1039/d4an00768a

Characterizing and understanding the photovoltage in n-Si/Au light-addressable electrochemical sensors

Armeen Hussain, Kayla Mancini, Yousef Khatib, Glen D. O'Neil

Chemistry and Biochemistry

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Here, we characterize the photovoltage of n-Si/Au light-addressable electrodes (LAEs) over a range of solution potentials from ca. −1 to +1 V. We find that the n-Si/Au photoelectrodes show photovoltages consistent with a semiconductor/liquid junction in contrast to a buried junction, which opposes our previous understanding of how photovoltage originates in these sensors.

Original language	English
Journal	Analyst
DOIs	https://doi.org/10.1039/d4an00768a
State	Accepted/In press - 2024

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10.1039/d4an00768a

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title = "Characterizing and understanding the photovoltage in n-Si/Au light-addressable electrochemical sensors",

abstract = "Here, we characterize the photovoltage of n-Si/Au light-addressable electrodes (LAEs) over a range of solution potentials from ca. −1 to +1 V. We find that the n-Si/Au photoelectrodes show photovoltages consistent with a semiconductor/liquid junction in contrast to a buried junction, which opposes our previous understanding of how photovoltage originates in these sensors.",

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AU - Hussain, Armeen

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AU - Khatib, Yousef

AU - O'Neil, Glen D.

PY - 2024

Y1 - 2024

N2 - Here, we characterize the photovoltage of n-Si/Au light-addressable electrodes (LAEs) over a range of solution potentials from ca. −1 to +1 V. We find that the n-Si/Au photoelectrodes show photovoltages consistent with a semiconductor/liquid junction in contrast to a buried junction, which opposes our previous understanding of how photovoltage originates in these sensors.

AB - Here, we characterize the photovoltage of n-Si/Au light-addressable electrodes (LAEs) over a range of solution potentials from ca. −1 to +1 V. We find that the n-Si/Au photoelectrodes show photovoltages consistent with a semiconductor/liquid junction in contrast to a buried junction, which opposes our previous understanding of how photovoltage originates in these sensors.

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DO - 10.1039/d4an00768a

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Characterizing and understanding the photovoltage in n-Si/Au light-addressable electrochemical sensors

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