Composition-dependent crystallization of alternative gate dielectrics

R. B. Van Dover, M. L. Green, L. Manchanda, Lynn Schneemeyer, T. Siegrist

Research output: Contribution to journalArticleResearchpeer-review

19 Citations (Scopus)

Abstract

The crystallization of amorphous oxides was investigated. These oxides are considered likely candidates to replace amorphous SiO2 as an alternative gate dielectrics. Dielectric constants were determined using films deposited on TiN-coated substrates. The results show that the silicate systems are not likely to be useful as replacements for SiO2, while aluminates are more promising.

Original languageEnglish
Pages (from-to)1459-1461
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number7
DOIs
StatePublished - 18 Aug 2003

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crystallization
aluminates
oxides
silicates
permittivity

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Van Dover, R. B. ; Green, M. L. ; Manchanda, L. ; Schneemeyer, Lynn ; Siegrist, T. / Composition-dependent crystallization of alternative gate dielectrics. In: Applied Physics Letters. 2003 ; Vol. 83, No. 7. pp. 1459-1461.
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Van Dover, RB, Green, ML, Manchanda, L, Schneemeyer, L & Siegrist, T 2003, 'Composition-dependent crystallization of alternative gate dielectrics', Applied Physics Letters, vol. 83, no. 7, pp. 1459-1461. https://doi.org/10.1063/1.1603341

Composition-dependent crystallization of alternative gate dielectrics. / Van Dover, R. B.; Green, M. L.; Manchanda, L.; Schneemeyer, Lynn; Siegrist, T.

In: Applied Physics Letters, Vol. 83, No. 7, 18.08.2003, p. 1459-1461.

Research output: Contribution to journalArticleResearchpeer-review

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AU - Siegrist, T.

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