Composition-dependent crystallization of alternative gate dielectrics

R. B. Van Dover; M. L. Green; L. Manchanda; L. F. Schneemeyer; T. Siegrist

doi:10.1063/1.1603341

Composition-dependent crystallization of alternative gate dielectrics

R. B. Van Dover, M. L. Green, L. Manchanda, L. F. Schneemeyer, T. Siegrist

Chemistry and Biochemistry

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21 Scopus citations

Abstract

The crystallization of amorphous oxides was investigated. These oxides are considered likely candidates to replace amorphous SiO₂ as an alternative gate dielectrics. Dielectric constants were determined using films deposited on TiN-coated substrates. The results show that the silicate systems are not likely to be useful as replacements for SiO₂, while aluminates are more promising.

Original language	English
Pages (from-to)	1459-1461
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	7
DOIs	https://doi.org/10.1063/1.1603341
State	Published - 18 Aug 2003

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title = "Composition-dependent crystallization of alternative gate dielectrics",

abstract = "The crystallization of amorphous oxides was investigated. These oxides are considered likely candidates to replace amorphous SiO2 as an alternative gate dielectrics. Dielectric constants were determined using films deposited on TiN-coated substrates. The results show that the silicate systems are not likely to be useful as replacements for SiO2, while aluminates are more promising.",

author = "{Van Dover}, {R. B.} and Green, {M. L.} and L. Manchanda and Schneemeyer, {L. F.} and T. Siegrist",

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AU - Van Dover, R. B.

AU - Green, M. L.

AU - Manchanda, L.

AU - Schneemeyer, L. F.

AU - Siegrist, T.

PY - 2003/8/18

Y1 - 2003/8/18

N2 - The crystallization of amorphous oxides was investigated. These oxides are considered likely candidates to replace amorphous SiO2 as an alternative gate dielectrics. Dielectric constants were determined using films deposited on TiN-coated substrates. The results show that the silicate systems are not likely to be useful as replacements for SiO2, while aluminates are more promising.

AB - The crystallization of amorphous oxides was investigated. These oxides are considered likely candidates to replace amorphous SiO2 as an alternative gate dielectrics. Dielectric constants were determined using films deposited on TiN-coated substrates. The results show that the silicate systems are not likely to be useful as replacements for SiO2, while aluminates are more promising.

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U2 - 10.1063/1.1603341

DO - 10.1063/1.1603341

M3 - Article

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SN - 0003-6951

VL - 83

SP - 1459

EP - 1461

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Composition-dependent crystallization of alternative gate dielectrics

Abstract

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