Composition-dependent crystallization of alternative gate dielectrics

R. B. Van Dover, M. L. Green, L. Manchanda, L. F. Schneemeyer, T. Siegrist

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

The crystallization of amorphous oxides was investigated. These oxides are considered likely candidates to replace amorphous SiO2 as an alternative gate dielectrics. Dielectric constants were determined using films deposited on TiN-coated substrates. The results show that the silicate systems are not likely to be useful as replacements for SiO2, while aluminates are more promising.

Original languageEnglish
Pages (from-to)1459-1461
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number7
DOIs
StatePublished - 18 Aug 2003

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