Deposition of uniform Zr-Sn-Ti-O films by on-axis reactive sputtering

Robert B. Van Dover, L. F. Schneemeyer

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

We describe the deposition of amorphous Zr-Sn-Ti-O (aZTT) dielectric thin films using conventional on-axis reactive sputtering. Thin films of composition Zr 0.2Sn 0.2Ti 0.6O 2 have excellent dielectric properties: 40-50-nm thick films with a dielectric constant of 50-70 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/μm 2. Breakdown fields were measured to be 3-5 MV/cm, yielding a figure of merit εε 0E br = 15-30 μC/cm 2, up to eightfold higher than conventional deposited SiO 2. Leakage currents, measured at 1.0 MV/cm, were in the range 10 -9-10 -7 A/cm 2. This material appears well-suited for use in Si-IC device technology, for example as storage capacitors in DRAM.

Original languageEnglish
Pages (from-to)329-331
Number of pages3
JournalIEEE Electron Device Letters
Volume19
Issue number9
DOIs
StatePublished - 1 Sep 1998

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Reactive sputtering
Capacitor storage
Thin films
Dielectric films
Dynamic random access storage
Thick films
Leakage currents
Dielectric properties
Permittivity
Capacitance
Processing
Chemical analysis

Cite this

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abstract = "We describe the deposition of amorphous Zr-Sn-Ti-O (aZTT) dielectric thin films using conventional on-axis reactive sputtering. Thin films of composition Zr 0.2Sn 0.2Ti 0.6O 2 have excellent dielectric properties: 40-50-nm thick films with a dielectric constant of 50-70 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/μm 2. Breakdown fields were measured to be 3-5 MV/cm, yielding a figure of merit εε 0E br = 15-30 μC/cm 2, up to eightfold higher than conventional deposited SiO 2. Leakage currents, measured at 1.0 MV/cm, were in the range 10 -9-10 -7 A/cm 2. This material appears well-suited for use in Si-IC device technology, for example as storage capacitors in DRAM.",
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Deposition of uniform Zr-Sn-Ti-O films by on-axis reactive sputtering. / Van Dover, Robert B.; Schneemeyer, L. F.

In: IEEE Electron Device Letters, Vol. 19, No. 9, 01.09.1998, p. 329-331.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Van Dover, Robert B.

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