TY - JOUR
T1 - Deposition of uniform Zr-Sn-Ti-O films by on-axis reactive sputtering
AU - Van Dover, Robert B.
AU - Schneemeyer, L. F.
PY - 1998/9
Y1 - 1998/9
N2 - We describe the deposition of amorphous Zr-Sn-Ti-O (aZTT) dielectric thin films using conventional on-axis reactive sputtering. Thin films of composition Zr 0.2Sn 0.2Ti 0.6O 2 have excellent dielectric properties: 40-50-nm thick films with a dielectric constant of 50-70 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/μm 2. Breakdown fields were measured to be 3-5 MV/cm, yielding a figure of merit εε 0E br = 15-30 μC/cm 2, up to eightfold higher than conventional deposited SiO 2. Leakage currents, measured at 1.0 MV/cm, were in the range 10 -9-10 -7 A/cm 2. This material appears well-suited for use in Si-IC device technology, for example as storage capacitors in DRAM.
AB - We describe the deposition of amorphous Zr-Sn-Ti-O (aZTT) dielectric thin films using conventional on-axis reactive sputtering. Thin films of composition Zr 0.2Sn 0.2Ti 0.6O 2 have excellent dielectric properties: 40-50-nm thick films with a dielectric constant of 50-70 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/μm 2. Breakdown fields were measured to be 3-5 MV/cm, yielding a figure of merit εε 0E br = 15-30 μC/cm 2, up to eightfold higher than conventional deposited SiO 2. Leakage currents, measured at 1.0 MV/cm, were in the range 10 -9-10 -7 A/cm 2. This material appears well-suited for use in Si-IC device technology, for example as storage capacitors in DRAM.
UR - http://www.scopus.com/inward/record.url?scp=0032166495&partnerID=8YFLogxK
U2 - 10.1109/55.709630
DO - 10.1109/55.709630
M3 - Article
AN - SCOPUS:0032166495
SN - 0741-3106
VL - 19
SP - 329
EP - 331
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 9
ER -