Efficiency losses from carrier-type inhomogeneity in tungsten diselenide photoelectrodes

S. Menezes, L. F. Schneemeyer, H. J. Lewerenz

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Abstract

The coexistence of macroscopic p- and n-type domains in nominally smooth, single-crystal tungsten diselenide photoelectrodes leads to substantial efficiency losses in these crystals. The presence of such regions is demonstrated by rotating-disk electrode experiments, Seebeck coefficient measurements, and in situ topographic photogenerated carrier-collection analysis with a scanning laser spot. These results indicate the importance of controlling growth parameters to yield homogeneously doped crystals to achieve maximum solar conversion efficiencies.

Original languageEnglish
Pages (from-to)949-951
Number of pages3
JournalApplied Physics Letters
Volume38
Issue number11
DOIs
StatePublished - 1 Dec 1981

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