Abstract
The coexistence of macroscopic p- and n-type domains in nominally smooth, single-crystal tungsten diselenide photoelectrodes leads to substantial efficiency losses in these crystals. The presence of such regions is demonstrated by rotating-disk electrode experiments, Seebeck coefficient measurements, and in situ topographic photogenerated carrier-collection analysis with a scanning laser spot. These results indicate the importance of controlling growth parameters to yield homogeneously doped crystals to achieve maximum solar conversion efficiencies.
| Original language | English |
|---|---|
| Pages (from-to) | 949-951 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 38 |
| Issue number | 11 |
| DOIs | |
| State | Published - 1981 |