Electrochemical Synthesis of Photoactive MoS2

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Abstract

The growth of polycrystalline films and single crystals of molybdenum disulfide by electrolytic reduction of a sodium tetraborate-sodium fluoride melt containing molybdenum trioxide and sodium sulfate has been examined and physical properties of those deposits studied. Polycrystalline n-type Mos2is readily obtained from a melt at 800°C while larger single-crystals are obtained if the melt temperature is raised to 900°C. MoS2is a semiconductor with bandgap well matched to the solar spectrum and with unusual resistance to photoelectrochemical corrosion. Electrochemically-grown single crystals and polycrystalline films were employed as photoanodes in aqueous iodide-triiodide electrolytes under ~40 mW/cm2tungsten-halogen illumination. Open-circuit photopotentials of ~150 mV were observed for polycrystalline MoS2. For single crystal electrolytic MoS2an open-circuit photopotential of 210 mV and ~2 mA/cm2short circuit current were reached. The use of electrochemical methods to prepare these materials offers the advantages of relatively low growth temperatures, controlled thickness, and excellent adaptability to producing large-area films inexpensively.

Original languageEnglish
Pages (from-to)1536-1539
Number of pages4
JournalJournal of the Electrochemical Society
Volume130
Issue number7
DOIs
StatePublished - 1 Jan 1983

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electrochemical synthesis
Single crystals
single crystals
Molybdenum
Networks (circuits)
Electrolytic reduction
sodium fluorides
molybdenum disulfides
Sodium borate
Sodium Fluoride
Halogens
Sodium sulfate
solar spectra
Iodides
Growth temperature
sodium sulfates
halogens
iodides
Electrolytes
molybdenum

Cite this

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title = "Electrochemical Synthesis of Photoactive MoS2",
abstract = "The growth of polycrystalline films and single crystals of molybdenum disulfide by electrolytic reduction of a sodium tetraborate-sodium fluoride melt containing molybdenum trioxide and sodium sulfate has been examined and physical properties of those deposits studied. Polycrystalline n-type Mos2is readily obtained from a melt at 800°C while larger single-crystals are obtained if the melt temperature is raised to 900°C. MoS2is a semiconductor with bandgap well matched to the solar spectrum and with unusual resistance to photoelectrochemical corrosion. Electrochemically-grown single crystals and polycrystalline films were employed as photoanodes in aqueous iodide-triiodide electrolytes under ~40 mW/cm2tungsten-halogen illumination. Open-circuit photopotentials of ~150 mV were observed for polycrystalline MoS2. For single crystal electrolytic MoS2an open-circuit photopotential of 210 mV and ~2 mA/cm2short circuit current were reached. The use of electrochemical methods to prepare these materials offers the advantages of relatively low growth temperatures, controlled thickness, and excellent adaptability to producing large-area films inexpensively.",
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Electrochemical Synthesis of Photoactive MoS2. / Schneemeyer, Lynn.

In: Journal of the Electrochemical Society, Vol. 130, No. 7, 01.01.1983, p. 1536-1539.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Electrochemical Synthesis of Photoactive MoS2

AU - Schneemeyer, Lynn

PY - 1983/1/1

Y1 - 1983/1/1

N2 - The growth of polycrystalline films and single crystals of molybdenum disulfide by electrolytic reduction of a sodium tetraborate-sodium fluoride melt containing molybdenum trioxide and sodium sulfate has been examined and physical properties of those deposits studied. Polycrystalline n-type Mos2is readily obtained from a melt at 800°C while larger single-crystals are obtained if the melt temperature is raised to 900°C. MoS2is a semiconductor with bandgap well matched to the solar spectrum and with unusual resistance to photoelectrochemical corrosion. Electrochemically-grown single crystals and polycrystalline films were employed as photoanodes in aqueous iodide-triiodide electrolytes under ~40 mW/cm2tungsten-halogen illumination. Open-circuit photopotentials of ~150 mV were observed for polycrystalline MoS2. For single crystal electrolytic MoS2an open-circuit photopotential of 210 mV and ~2 mA/cm2short circuit current were reached. The use of electrochemical methods to prepare these materials offers the advantages of relatively low growth temperatures, controlled thickness, and excellent adaptability to producing large-area films inexpensively.

AB - The growth of polycrystalline films and single crystals of molybdenum disulfide by electrolytic reduction of a sodium tetraborate-sodium fluoride melt containing molybdenum trioxide and sodium sulfate has been examined and physical properties of those deposits studied. Polycrystalline n-type Mos2is readily obtained from a melt at 800°C while larger single-crystals are obtained if the melt temperature is raised to 900°C. MoS2is a semiconductor with bandgap well matched to the solar spectrum and with unusual resistance to photoelectrochemical corrosion. Electrochemically-grown single crystals and polycrystalline films were employed as photoanodes in aqueous iodide-triiodide electrolytes under ~40 mW/cm2tungsten-halogen illumination. Open-circuit photopotentials of ~150 mV were observed for polycrystalline MoS2. For single crystal electrolytic MoS2an open-circuit photopotential of 210 mV and ~2 mA/cm2short circuit current were reached. The use of electrochemical methods to prepare these materials offers the advantages of relatively low growth temperatures, controlled thickness, and excellent adaptability to producing large-area films inexpensively.

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