High dielectric constant Hf-Sn-Ti-O thin films

L. F. Schneemeyer; R. B. Van Dover; R. M. Fleming

doi:10.1063/1.124887

High dielectric constant Hf-Sn-Ti-O thin films

L. F. Schneemeyer, R. B. Van Dover, R. M. Fleming

Chemistry and Biochemistry

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Abstract

High dielectric constant Hf-Sn-Ti-O thin-film materials were identified using a compositional-spread approach. Thin films of composition Hf_0.2Sn_0.05Ti_0.75O₂ prepared at 250°C have excellent dielectric properties: 40-70-nm-thick films with a dielectric constant of 40-60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/μm². Breakdown fields were measured to be about 3-4 MV/cm, yielding a figure of merit ∈∈₀E_br ∼19 μC/cm². Leakage currents, measured at 1 MV/cm, were in the range 10^-7 - 10^-6 A/cm².

Original language	English
Pages (from-to)	1967-1969
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	13
DOIs	https://doi.org/10.1063/1.124887
State	Published - 27 Sep 1999

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title = "High dielectric constant Hf-Sn-Ti-O thin films",

abstract = "High dielectric constant Hf-Sn-Ti-O thin-film materials were identified using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2 prepared at 250°C have excellent dielectric properties: 40-70-nm-thick films with a dielectric constant of 40-60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/μm2. Breakdown fields were measured to be about 3-4 MV/cm, yielding a figure of merit ∈∈0Ebr ∼19 μC/cm2. Leakage currents, measured at 1 MV/cm, were in the range 10-7 - 10-6 A/cm2.",

author = "Schneemeyer, {L. F.} and {Van Dover}, {R. B.} and Fleming, {R. M.}",

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AU - Schneemeyer, L. F.

AU - Van Dover, R. B.

AU - Fleming, R. M.

PY - 1999/9/27

Y1 - 1999/9/27

N2 - High dielectric constant Hf-Sn-Ti-O thin-film materials were identified using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2 prepared at 250°C have excellent dielectric properties: 40-70-nm-thick films with a dielectric constant of 40-60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/μm2. Breakdown fields were measured to be about 3-4 MV/cm, yielding a figure of merit ∈∈0Ebr ∼19 μC/cm2. Leakage currents, measured at 1 MV/cm, were in the range 10-7 - 10-6 A/cm2.

AB - High dielectric constant Hf-Sn-Ti-O thin-film materials were identified using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2 prepared at 250°C have excellent dielectric properties: 40-70-nm-thick films with a dielectric constant of 40-60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/μm2. Breakdown fields were measured to be about 3-4 MV/cm, yielding a figure of merit ∈∈0Ebr ∼19 μC/cm2. Leakage currents, measured at 1 MV/cm, were in the range 10-7 - 10-6 A/cm2.

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JO - Applied Physics Letters

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High dielectric constant Hf-Sn-Ti-O thin films

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