High dielectric constant Hf-Sn-Ti-O thin films

Lynn Schneemeyer, R. B. Van Dover, R. M. Fleming

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Abstract

High dielectric constant Hf-Sn-Ti-O thin-film materials were identified using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2 prepared at 250°C have excellent dielectric properties: 40-70-nm-thick films with a dielectric constant of 40-60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/μm2. Breakdown fields were measured to be about 3-4 MV/cm, yielding a figure of merit ∈∈0Ebr ∼19 μC/cm2. Leakage currents, measured at 1 MV/cm, were in the range 10-7 - 10-6 A/cm2.

Original languageEnglish
Pages (from-to)1967-1969
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number13
DOIs
StatePublished - 27 Sep 1999

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permittivity
thin films
figure of merit
thick films
dielectric properties
leakage
breakdown
capacitance

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Schneemeyer, Lynn ; Van Dover, R. B. ; Fleming, R. M. / High dielectric constant Hf-Sn-Ti-O thin films. In: Applied Physics Letters. 1999 ; Vol. 75, No. 13. pp. 1967-1969.
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High dielectric constant Hf-Sn-Ti-O thin films. / Schneemeyer, Lynn; Van Dover, R. B.; Fleming, R. M.

In: Applied Physics Letters, Vol. 75, No. 13, 27.09.1999, p. 1967-1969.

Research output: Contribution to journalArticleResearchpeer-review

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