High dielectric constant Hf-Ti-Sn-O off-axis cosputtered films

L. F. Schneemeyer; R. B. Van Dover; R. M. Fleming

High dielectric constant Hf-Ti-Sn-O off-axis cosputtered films

L. F. Schneemeyer, R. B. Van Dover, R. M. Fleming

Chemistry and Biochemistry

Research output: Contribution to journal › Conference article › peer-review

Abstract

New Hf-Sn-Ti-O thin-film dielectric materials were explored using a compositional-spread approach. Thin films of composition Hf_0.2Sn_0.05Ti_0.75O₂ prepared at 250°C have excellent dielectric properties: 40-50 nm thick films with a dielectric constant of 40-60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/μm². Breakdown fields were measured to be about 4 MV/cm, yielding a Figure of Merit εε₀E_br = 19 μC/cm². Leakage currents, measured at 1 MV/cm, were in the range 10^-7-10^-6 A/cm². Film properties are strongly dependent on substrate temperature during deposition. Like their recently reported zirconium analogs, these materials are of interest for use in Si-IC device technology, for example as storage capacitors in DRAM.

Original language	English
Pages (from-to)	567-572
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	541
State	Published - 1999
Event	Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: 30 Nov 1998 → 3 Dec 1998

Cite this

@article{b604d43b84c54cf3987a3ad8c26cab3e,

title = "High dielectric constant Hf-Ti-Sn-O off-axis cosputtered films",

abstract = "New Hf-Sn-Ti-O thin-film dielectric materials were explored using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2 prepared at 250°C have excellent dielectric properties: 40-50 nm thick films with a dielectric constant of 40-60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/μm2. Breakdown fields were measured to be about 4 MV/cm, yielding a Figure of Merit εε0Ebr = 19 μC/cm2. Leakage currents, measured at 1 MV/cm, were in the range 10-7-10-6 A/cm2. Film properties are strongly dependent on substrate temperature during deposition. Like their recently reported zirconium analogs, these materials are of interest for use in Si-IC device technology, for example as storage capacitors in DRAM.",

author = "Schneemeyer, {L. F.} and {Van Dover}, {R. B.} and Fleming, {R. M.}",

year = "1999",

language = "English",

volume = "541",

pages = "567--572",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' ; Conference date: 30-11-1998 Through 03-12-1998",

}

TY - JOUR

T1 - High dielectric constant Hf-Ti-Sn-O off-axis cosputtered films

AU - Schneemeyer, L. F.

AU - Van Dover, R. B.

AU - Fleming, R. M.

PY - 1999

Y1 - 1999

N2 - New Hf-Sn-Ti-O thin-film dielectric materials were explored using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2 prepared at 250°C have excellent dielectric properties: 40-50 nm thick films with a dielectric constant of 40-60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/μm2. Breakdown fields were measured to be about 4 MV/cm, yielding a Figure of Merit εε0Ebr = 19 μC/cm2. Leakage currents, measured at 1 MV/cm, were in the range 10-7-10-6 A/cm2. Film properties are strongly dependent on substrate temperature during deposition. Like their recently reported zirconium analogs, these materials are of interest for use in Si-IC device technology, for example as storage capacitors in DRAM.

AB - New Hf-Sn-Ti-O thin-film dielectric materials were explored using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2 prepared at 250°C have excellent dielectric properties: 40-50 nm thick films with a dielectric constant of 40-60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/μm2. Breakdown fields were measured to be about 4 MV/cm, yielding a Figure of Merit εε0Ebr = 19 μC/cm2. Leakage currents, measured at 1 MV/cm, were in the range 10-7-10-6 A/cm2. Film properties are strongly dependent on substrate temperature during deposition. Like their recently reported zirconium analogs, these materials are of interest for use in Si-IC device technology, for example as storage capacitors in DRAM.

UR - http://www.scopus.com/inward/record.url?scp=0032592275&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032592275

SN - 0272-9172

VL - 541

SP - 567

EP - 572

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'

Y2 - 30 November 1998 through 3 December 1998

ER -

High dielectric constant Hf-Ti-Sn-O off-axis cosputtered films

Abstract

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