High dielectric constant Hf-Ti-Sn-O off-axis cosputtered films

Lynn Schneemeyer, R. B. Van Dover, R. M. Fleming

Research output: Contribution to journalConference article

Abstract

New Hf-Sn-Ti-O thin-film dielectric materials were explored using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2 prepared at 250°C have excellent dielectric properties: 40-50 nm thick films with a dielectric constant of 40-60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/μm2. Breakdown fields were measured to be about 4 MV/cm, yielding a Figure of Merit εε0Ebr = 19 μC/cm2. Leakage currents, measured at 1 MV/cm, were in the range 10-7-10-6 A/cm2. Film properties are strongly dependent on substrate temperature during deposition. Like their recently reported zirconium analogs, these materials are of interest for use in Si-IC device technology, for example as storage capacitors in DRAM.

Original languageEnglish
Pages (from-to)567-572
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume541
StatePublished - 1 Jan 1999
EventProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
Duration: 30 Nov 19983 Dec 1998

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Permittivity
Capacitor storage
permittivity
Thin films
Dynamic random access storage
thin films
Thick films
Zirconium
figure of merit
Leakage currents
Dielectric properties
thick films
dielectric properties
capacitors
leakage
Capacitance
breakdown
capacitance
analogs
Substrates

Cite this

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abstract = "New Hf-Sn-Ti-O thin-film dielectric materials were explored using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2 prepared at 250°C have excellent dielectric properties: 40-50 nm thick films with a dielectric constant of 40-60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/μm2. Breakdown fields were measured to be about 4 MV/cm, yielding a Figure of Merit εε0Ebr = 19 μC/cm2. Leakage currents, measured at 1 MV/cm, were in the range 10-7-10-6 A/cm2. Film properties are strongly dependent on substrate temperature during deposition. Like their recently reported zirconium analogs, these materials are of interest for use in Si-IC device technology, for example as storage capacitors in DRAM.",
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High dielectric constant Hf-Ti-Sn-O off-axis cosputtered films. / Schneemeyer, Lynn; Van Dover, R. B.; Fleming, R. M.

In: Materials Research Society Symposium - Proceedings, Vol. 541, 01.01.1999, p. 567-572.

Research output: Contribution to journalConference article

TY - JOUR

T1 - High dielectric constant Hf-Ti-Sn-O off-axis cosputtered films

AU - Schneemeyer, Lynn

AU - Van Dover, R. B.

AU - Fleming, R. M.

PY - 1999/1/1

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N2 - New Hf-Sn-Ti-O thin-film dielectric materials were explored using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2 prepared at 250°C have excellent dielectric properties: 40-50 nm thick films with a dielectric constant of 40-60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/μm2. Breakdown fields were measured to be about 4 MV/cm, yielding a Figure of Merit εε0Ebr = 19 μC/cm2. Leakage currents, measured at 1 MV/cm, were in the range 10-7-10-6 A/cm2. Film properties are strongly dependent on substrate temperature during deposition. Like their recently reported zirconium analogs, these materials are of interest for use in Si-IC device technology, for example as storage capacitors in DRAM.

AB - New Hf-Sn-Ti-O thin-film dielectric materials were explored using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2 prepared at 250°C have excellent dielectric properties: 40-50 nm thick films with a dielectric constant of 40-60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/μm2. Breakdown fields were measured to be about 4 MV/cm, yielding a Figure of Merit εε0Ebr = 19 μC/cm2. Leakage currents, measured at 1 MV/cm, were in the range 10-7-10-6 A/cm2. Film properties are strongly dependent on substrate temperature during deposition. Like their recently reported zirconium analogs, these materials are of interest for use in Si-IC device technology, for example as storage capacitors in DRAM.

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