Improved properties of TaOx films doped with Al and N

R. B. Van Dover, Lynn Schneemeyer, R. M. Fleming, D. J. Werder

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Simultaneous addition of Al and N to Ta-O thin films is found to significantly improve the dielectric properties of the films. Specifically, substitution of 10-40 at. % Al for Ta along with approx. 2 at. % N for O is found to decrease the density of catastrophic defects in the films, resulting in high and statistically more uniform breakdown voltages. This conclusion is based on evaluation of approx. 750 individual capacitors in each experiment.

Original languageEnglish
Pages (from-to)561-566
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume541
StatePublished - 1 Jan 1999
EventProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
Duration: 30 Nov 19983 Dec 1998

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Electric breakdown
electrical faults
Dielectric properties
dielectric properties
capacitors
Capacitors
Substitution reactions
substitutes
Thin films
Defects
evaluation
defects
thin films
Experiments

Cite this

Van Dover, R. B. ; Schneemeyer, Lynn ; Fleming, R. M. ; Werder, D. J. / Improved properties of TaOx films doped with Al and N. In: Materials Research Society Symposium - Proceedings. 1999 ; Vol. 541. pp. 561-566.
@article{3f527de2fc7a449ab07e4c03bd7b9502,
title = "Improved properties of TaOx films doped with Al and N",
abstract = "Simultaneous addition of Al and N to Ta-O thin films is found to significantly improve the dielectric properties of the films. Specifically, substitution of 10-40 at. {\%} Al for Ta along with approx. 2 at. {\%} N for O is found to decrease the density of catastrophic defects in the films, resulting in high and statistically more uniform breakdown voltages. This conclusion is based on evaluation of approx. 750 individual capacitors in each experiment.",
author = "{Van Dover}, {R. B.} and Lynn Schneemeyer and Fleming, {R. M.} and Werder, {D. J.}",
year = "1999",
month = "1",
day = "1",
language = "English",
volume = "541",
pages = "561--566",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

Improved properties of TaOx films doped with Al and N. / Van Dover, R. B.; Schneemeyer, Lynn; Fleming, R. M.; Werder, D. J.

In: Materials Research Society Symposium - Proceedings, Vol. 541, 01.01.1999, p. 561-566.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Improved properties of TaOx films doped with Al and N

AU - Van Dover, R. B.

AU - Schneemeyer, Lynn

AU - Fleming, R. M.

AU - Werder, D. J.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Simultaneous addition of Al and N to Ta-O thin films is found to significantly improve the dielectric properties of the films. Specifically, substitution of 10-40 at. % Al for Ta along with approx. 2 at. % N for O is found to decrease the density of catastrophic defects in the films, resulting in high and statistically more uniform breakdown voltages. This conclusion is based on evaluation of approx. 750 individual capacitors in each experiment.

AB - Simultaneous addition of Al and N to Ta-O thin films is found to significantly improve the dielectric properties of the films. Specifically, substitution of 10-40 at. % Al for Ta along with approx. 2 at. % N for O is found to decrease the density of catastrophic defects in the films, resulting in high and statistically more uniform breakdown voltages. This conclusion is based on evaluation of approx. 750 individual capacitors in each experiment.

UR - http://www.scopus.com/inward/record.url?scp=0032592284&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032592284

VL - 541

SP - 561

EP - 566

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -