Improved properties of TaOx films doped with Al and N

R. B. Van Dover; L. F. Schneemeyer; R. M. Fleming; D. J. Werder

Improved properties of TaO_x films doped with Al and N

R. B. Van Dover, L. F. Schneemeyer, R. M. Fleming, D. J. Werder

Chemistry and Biochemistry

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Simultaneous addition of Al and N to Ta-O thin films is found to significantly improve the dielectric properties of the films. Specifically, substitution of 10-40 at. % Al for Ta along with approx. 2 at. % N for O is found to decrease the density of catastrophic defects in the films, resulting in high and statistically more uniform breakdown voltages. This conclusion is based on evaluation of approx. 750 individual capacitors in each experiment.

Original language	English
Pages (from-to)	561-566
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	541
State	Published - 1999
Event	Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: 30 Nov 1998 → 3 Dec 1998

Cite this

@article{3f527de2fc7a449ab07e4c03bd7b9502,

title = "Improved properties of TaOx films doped with Al and N",

abstract = "Simultaneous addition of Al and N to Ta-O thin films is found to significantly improve the dielectric properties of the films. Specifically, substitution of 10-40 at. % Al for Ta along with approx. 2 at. % N for O is found to decrease the density of catastrophic defects in the films, resulting in high and statistically more uniform breakdown voltages. This conclusion is based on evaluation of approx. 750 individual capacitors in each experiment.",

author = "{Van Dover}, {R. B.} and Schneemeyer, {L. F.} and Fleming, {R. M.} and Werder, {D. J.}",

year = "1999",

language = "English",

volume = "541",

pages = "561--566",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' ; Conference date: 30-11-1998 Through 03-12-1998",

}

TY - JOUR

T1 - Improved properties of TaOx films doped with Al and N

AU - Van Dover, R. B.

AU - Schneemeyer, L. F.

AU - Fleming, R. M.

AU - Werder, D. J.

PY - 1999

Y1 - 1999

N2 - Simultaneous addition of Al and N to Ta-O thin films is found to significantly improve the dielectric properties of the films. Specifically, substitution of 10-40 at. % Al for Ta along with approx. 2 at. % N for O is found to decrease the density of catastrophic defects in the films, resulting in high and statistically more uniform breakdown voltages. This conclusion is based on evaluation of approx. 750 individual capacitors in each experiment.

AB - Simultaneous addition of Al and N to Ta-O thin films is found to significantly improve the dielectric properties of the films. Specifically, substitution of 10-40 at. % Al for Ta along with approx. 2 at. % N for O is found to decrease the density of catastrophic defects in the films, resulting in high and statistically more uniform breakdown voltages. This conclusion is based on evaluation of approx. 750 individual capacitors in each experiment.

UR - http://www.scopus.com/inward/record.url?scp=0032592284&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032592284

SN - 0272-9172

VL - 541

SP - 561

EP - 566

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'

Y2 - 30 November 1998 through 3 December 1998

ER -

Improved properties of TaO_x films doped with Al and N

Abstract

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