Improved properties of TaOx films doped with Al and N

R. B. Van Dover, L. F. Schneemeyer, R. M. Fleming, D. J. Werder

Research output: Contribution to journalConference articlepeer-review

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Simultaneous addition of Al and N to Ta-O thin films is found to significantly improve the dielectric properties of the films. Specifically, substitution of 10-40 at. % Al for Ta along with approx. 2 at. % N for O is found to decrease the density of catastrophic defects in the films, resulting in high and statistically more uniform breakdown voltages. This conclusion is based on evaluation of approx. 750 individual capacitors in each experiment.

Original languageEnglish
Pages (from-to)561-566
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1999
EventProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
Duration: 30 Nov 19983 Dec 1998


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