Large electronic-density increase on cooling a layered metal: Doped Bi2Te3

G. A. Thomas, D. H. Rapkine, R. B. Van Dover, L. F. Mattheiss, W. A. Sunder, L. F. Schneemeyer, J. V. Waszczak

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Abstract

We have carried out optical and transport measurements of the free carriers and optical measurements of states above the semiconducting energy gap in the layered crystal Bi2Te3. We find that cooling causes a substantial amount of spectral weight to condense from the above-gap states into the metallic states.

Original languageEnglish
Pages (from-to)1553-1556
Number of pages4
JournalPhysical Review B
Volume46
Issue number3
DOIs
StatePublished - 1 Jan 1992

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    Thomas, G. A., Rapkine, D. H., Van Dover, R. B., Mattheiss, L. F., Sunder, W. A., Schneemeyer, L. F., & Waszczak, J. V. (1992). Large electronic-density increase on cooling a layered metal: Doped Bi2Te3. Physical Review B, 46(3), 1553-1556. https://doi.org/10.1103/PhysRevB.46.1553