Low-temperature deposition of zirconium and hafnium boride films by thermal decomposition of the metal borohydrides (M[BH4]4)

A. L. Wayda, Lynn Schneemeyer, R. L. Opila

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49 Citations (Scopus)

Abstract

Conductive (150 μω cm), adherent films of zirconium and hafnium borides have been deposited on various substrates by the low-temperature (100-270 °C) thermal decomposition of Zr[BH4]4 and Hf[BH4]4. Auger electron spectroscopy of these films shows that their composition is ZrB2 and HfB2. The film surfaces are oxidized and slightly carbon contaminated. However, the bulk contains less than 1 at. % C or O. This synthesis is by far the lowest temperature preparation of these materials (plasma-enhanced chemical vapor deposition of TiB2 requires 480-600 °C) and holds great promise for the use of these materials in electronics applications.

Original languageEnglish
Pages (from-to)361-363
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number5
DOIs
StatePublished - 1 Dec 1988

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borides
borohydrides
hafnium
thermal decomposition
metals
Auger spectroscopy
electron spectroscopy
vapor deposition
preparation
carbon
synthesis
electronics

Cite this

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Low-temperature deposition of zirconium and hafnium boride films by thermal decomposition of the metal borohydrides (M[BH4]4). / Wayda, A. L.; Schneemeyer, Lynn; Opila, R. L.

In: Applied Physics Letters, Vol. 53, No. 5, 01.12.1988, p. 361-363.

Research output: Contribution to journalArticleResearchpeer-review

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T1 - Low-temperature deposition of zirconium and hafnium boride films by thermal decomposition of the metal borohydrides (M[BH4]4)

AU - Wayda, A. L.

AU - Schneemeyer, Lynn

AU - Opila, R. L.

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