Abstract
We describe a new class of low-carrier-density magnetic materials based on lanthanide-substituted scandium and yttrium pnictides. In general, these III-V compounds have energy gaps in the vicinty of 1 eV, and like most of the lanthanide pnictides, form in the B1 (rocksalt) structure. Substitution of rare earths for Y or Sc to form solid solutions is readily achieved. For example, we have produced GdxY1-xN by reactive magnetron cosputtering, and obtained epitaxial growth on sapphire substrates resulting in high-quality single-crystal thin films. These films exhibit moderately low carrier densities and high mobilities, and have interesting magnetic properties at low temperatures. In this paper we present a preliminary look at some of the properties of these materials.
| Original language | English |
|---|---|
| Pages (from-to) | 3543-3545 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 61 |
| Issue number | 8 |
| DOIs | |
| State | Published - 1987 |