Reproducibility in tunneling achieved through liquid etching of YBCO

M. Gurvitch; J. M. Valles; R. C. Dynes; A. M. Cucolo; L. F. Schneemeyer

doi:10.1016/0921-4534(89)90596-0

Reproducibility in tunneling achieved through liquid etching of YBCO

M. Gurvitch, J. M. Valles, R. C. Dynes, A. M. Cucolo, L. F. Schneemeyer

Chemistry and Biochemistry

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Abstract

We have developed a procedure for preparation of reproducible tunnel junctions of the S₁IS₂ type, where S₁ is a chemically etched single crystal of YBa₂Cu₃O_x (YBCO), S₂ is a film of Pb, and I is an insulting barrier of unknown nature which is formated at the surface of YBCO at 100°C in air. The structure in the dV/di (V) first appears at T = T_c = 89K and sharpens as T is decreased. There are two gap-like structures in dV/di at ∼4 and ∼19mV, and an additional structure at ∼45mV.

Original language	English
Pages (from-to)	1067-1068
Number of pages	2
Journal	Physica C: Superconductivity and its applications
Volume	162-164
Issue number	PART 2
DOIs	https://doi.org/10.1016/0921-4534(89)90596-0
State	Published - Dec 1989

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title = "Reproducibility in tunneling achieved through liquid etching of YBCO",

abstract = "We have developed a procedure for preparation of reproducible tunnel junctions of the S1IS2 type, where S1 is a chemically etched single crystal of YBa2Cu3Ox (YBCO), S2 is a film of Pb, and I is an insulting barrier of unknown nature which is formated at the surface of YBCO at 100°C in air. The structure in the dV/di (V) first appears at T = Tc = 89K and sharpens as T is decreased. There are two gap-like structures in dV/di at ∼4 and ∼19mV, and an additional structure at ∼45mV.",

author = "M. Gurvitch and Valles, {J. M.} and Dynes, {R. C.} and Cucolo, {A. M.} and Schneemeyer, {L. F.}",

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T1 - Reproducibility in tunneling achieved through liquid etching of YBCO

AU - Gurvitch, M.

AU - Valles, J. M.

AU - Dynes, R. C.

AU - Cucolo, A. M.

AU - Schneemeyer, L. F.

PY - 1989/12

Y1 - 1989/12

N2 - We have developed a procedure for preparation of reproducible tunnel junctions of the S1IS2 type, where S1 is a chemically etched single crystal of YBa2Cu3Ox (YBCO), S2 is a film of Pb, and I is an insulting barrier of unknown nature which is formated at the surface of YBCO at 100°C in air. The structure in the dV/di (V) first appears at T = Tc = 89K and sharpens as T is decreased. There are two gap-like structures in dV/di at ∼4 and ∼19mV, and an additional structure at ∼45mV.

AB - We have developed a procedure for preparation of reproducible tunnel junctions of the S1IS2 type, where S1 is a chemically etched single crystal of YBa2Cu3Ox (YBCO), S2 is a film of Pb, and I is an insulting barrier of unknown nature which is formated at the surface of YBCO at 100°C in air. The structure in the dV/di (V) first appears at T = Tc = 89K and sharpens as T is decreased. There are two gap-like structures in dV/di at ∼4 and ∼19mV, and an additional structure at ∼45mV.

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M3 - Article

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VL - 162-164

SP - 1067

EP - 1068

JO - Physica C: Superconductivity and its applications

JF - Physica C: Superconductivity and its applications

IS - PART 2

ER -

Reproducibility in tunneling achieved through liquid etching of YBCO

Abstract

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