We have developed a procedure for preparation of reproducible tunnel junctions of the S1IS2 type, where S1 is a chemically etched single crystal of YBa2Cu3Ox (YBCO), S2 is a film of Pb, and I is an insulting barrier of unknown nature which is formated at the surface of YBCO at 100°C in air. The structure in the dV/di (V) first appears at T = Tc = 89K and sharpens as T is decreased. There are two gap-like structures in dV/di at ∼4 and ∼19mV, and an additional structure at ∼45mV.
|Number of pages||2|
|Journal||Physica C: Superconductivity and its applications|
|Issue number||PART 2|
|State||Published - Dec 1989|