Reproducibility in tunneling achieved through liquid etching of YBCO

M. Gurvitch, J. M. Valles, R. C. Dynes, A. M. Cucolo, L. F. Schneemeyer

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We have developed a procedure for preparation of reproducible tunnel junctions of the S1IS2 type, where S1 is a chemically etched single crystal of YBa2Cu3Ox (YBCO), S2 is a film of Pb, and I is an insulting barrier of unknown nature which is formated at the surface of YBCO at 100°C in air. The structure in the dV/di (V) first appears at T = Tc = 89K and sharpens as T is decreased. There are two gap-like structures in dV/di at ∼4 and ∼19mV, and an additional structure at ∼45mV.

Original languageEnglish
Pages (from-to)1067-1068
Number of pages2
JournalPhysica C: Superconductivity and its applications
Issue numberPART 2
StatePublished - Dec 1989


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