Robust Stability of Optical and Electronic Properties of Gallium-Doped Zinc Oxide Thin Films to Gamma Ray Irradiation

Claudia Barone; Jeetendra Gupta; Rodica M. Martin; Ihor Sydoryk; Valentin Craciun; Junichi Nomoto; Hisao Makino; Tetsuya Yamamoto; Catalin Martin

doi:10.1002/pssb.202100469

Robust Stability of Optical and Electronic Properties of Gallium-Doped Zinc Oxide Thin Films to Gamma Ray Irradiation

Claudia Barone, Jeetendra Gupta, Rodica M. Martin, Ihor Sydoryk, Valentin Craciun, Junichi Nomoto, Hisao Makino, Tetsuya Yamamoto, Catalin Martin

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

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Abstract

Through combined measurements of broadband optical spectroscopy (10 meV to 6 eV), electrical resistivity, and Hall effect, the effects of gamma ray irradiation on electronic and optical properties of gallium-doped ZnO (GZO) thin films, deposited by ion plating direct-current arc discharge, are investigated. A significant number of films, deposited at various discharge currents (I _D = 100–200 A) and oxygen gas flow rates (OFR = 0–25 sccm), exposed to doses of 15 and 30 kGy of gamma rays, are studied. The results indicate strong resilience of films to irradiation: visible range transparency is reduced by 10–12% and the optical bandgap shifts to lower energies by less than 3%, while electrical resistivity, carrier concentration, and electron mobility remain nearly unchanged.

Original language	English
Article number	2100469
Journal	Physica Status Solidi (B) Basic Research
Volume	259
Issue number	8
DOIs	https://doi.org/10.1002/pssb.202100469
State	Published - Aug 2022

Keywords

Ga-doped ZnO
electronic properties
optical properties
transparent conductive oxides

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10.1002/pssb.202100469

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title = "Robust Stability of Optical and Electronic Properties of Gallium-Doped Zinc Oxide Thin Films to Gamma Ray Irradiation",

abstract = "Through combined measurements of broadband optical spectroscopy (10 meV to 6 eV), electrical resistivity, and Hall effect, the effects of gamma ray irradiation on electronic and optical properties of gallium-doped ZnO (GZO) thin films, deposited by ion plating direct-current arc discharge, are investigated. A significant number of films, deposited at various discharge currents (I D = 100–200 A) and oxygen gas flow rates (OFR = 0–25 sccm), exposed to doses of 15 and 30 kGy of gamma rays, are studied. The results indicate strong resilience of films to irradiation: visible range transparency is reduced by 10–12% and the optical bandgap shifts to lower energies by less than 3%, while electrical resistivity, carrier concentration, and electron mobility remain nearly unchanged.",

keywords = "Ga-doped ZnO, electronic properties, optical properties, transparent conductive oxides",

author = "Claudia Barone and Jeetendra Gupta and Martin, {Rodica M.} and Ihor Sydoryk and Valentin Craciun and Junichi Nomoto and Hisao Makino and Tetsuya Yamamoto and Catalin Martin",

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doi = "10.1002/pssb.202100469",

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T1 - Robust Stability of Optical and Electronic Properties of Gallium-Doped Zinc Oxide Thin Films to Gamma Ray Irradiation

AU - Barone, Claudia

AU - Gupta, Jeetendra

AU - Martin, Rodica M.

AU - Sydoryk, Ihor

AU - Craciun, Valentin

AU - Nomoto, Junichi

AU - Makino, Hisao

AU - Yamamoto, Tetsuya

AU - Martin, Catalin

PY - 2022/8

Y1 - 2022/8

N2 - Through combined measurements of broadband optical spectroscopy (10 meV to 6 eV), electrical resistivity, and Hall effect, the effects of gamma ray irradiation on electronic and optical properties of gallium-doped ZnO (GZO) thin films, deposited by ion plating direct-current arc discharge, are investigated. A significant number of films, deposited at various discharge currents (I D = 100–200 A) and oxygen gas flow rates (OFR = 0–25 sccm), exposed to doses of 15 and 30 kGy of gamma rays, are studied. The results indicate strong resilience of films to irradiation: visible range transparency is reduced by 10–12% and the optical bandgap shifts to lower energies by less than 3%, while electrical resistivity, carrier concentration, and electron mobility remain nearly unchanged.

AB - Through combined measurements of broadband optical spectroscopy (10 meV to 6 eV), electrical resistivity, and Hall effect, the effects of gamma ray irradiation on electronic and optical properties of gallium-doped ZnO (GZO) thin films, deposited by ion plating direct-current arc discharge, are investigated. A significant number of films, deposited at various discharge currents (I D = 100–200 A) and oxygen gas flow rates (OFR = 0–25 sccm), exposed to doses of 15 and 30 kGy of gamma rays, are studied. The results indicate strong resilience of films to irradiation: visible range transparency is reduced by 10–12% and the optical bandgap shifts to lower energies by less than 3%, while electrical resistivity, carrier concentration, and electron mobility remain nearly unchanged.

KW - Ga-doped ZnO

KW - electronic properties

KW - optical properties

KW - transparent conductive oxides

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U2 - 10.1002/pssb.202100469

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ER -

Robust Stability of Optical and Electronic Properties of Gallium-Doped Zinc Oxide Thin Films to Gamma Ray Irradiation

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Keywords

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