ScAlMgO 4: An oxide substrate for GaN epitaxy

E. S. Hellman, C. D. Brandle, L. F. Schneemeyer, D. Wiesmann, I. Brener, T. Siegrist, G. W. Berkstresser, D. N.E. Buchanan, E. H. Hartford

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Abstract

We report the use of ScAlMgO 4 as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO 4 makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO 2 substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO 4.

Original languageEnglish
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume1
StatePublished - 1 Dec 1996

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    Hellman, E. S., Brandle, C. D., Schneemeyer, L. F., Wiesmann, D., Brener, I., Siegrist, T., Berkstresser, G. W., Buchanan, D. N. E., & Hartford, E. H. (1996). ScAlMgO 4: An oxide substrate for GaN epitaxy. MRS Internet Journal of Nitride Semiconductor Research, 1.