ScAlMgO 4: An oxide substrate for GaN epitaxy

E. S. Hellman; C. D. Brandle; L. F. Schneemeyer; D. Wiesmann; I. Brener; T. Siegrist; G. W. Berkstresser; D. N.E. Buchanan; E. H. Hartford

ScAlMgO ₄: An oxide substrate for GaN epitaxy

E. S. Hellman, C. D. Brandle, L. F. Schneemeyer, D. Wiesmann, I. Brener, T. Siegrist, G. W. Berkstresser, D. N.E. Buchanan, E. H. Hartford

Chemistry and Biochemistry

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17 Scopus citations

Abstract

We report the use of ScAlMgO ₄ as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO ₄ makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO ₂ substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO ₄.

Original language	English
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	1
State	Published - 1 Dec 1996

Cite this

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title = "ScAlMgO 4: An oxide substrate for GaN epitaxy",

abstract = "We report the use of ScAlMgO 4 as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO 4 makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO 2 substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO 4.",

author = "Hellman, {E. S.} and Brandle, {C. D.} and Schneemeyer, {L. F.} and D. Wiesmann and I. Brener and T. Siegrist and Berkstresser, {G. W.} and Buchanan, {D. N.E.} and Hartford, {E. H.}",

year = "1996",

month = dec,

day = "1",

language = "English",

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journal = "MRS Internet Journal of Nitride Semiconductor Research",

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TY - JOUR

T1 - ScAlMgO 4

T2 - An oxide substrate for GaN epitaxy

AU - Hellman, E. S.

AU - Brandle, C. D.

AU - Schneemeyer, L. F.

AU - Wiesmann, D.

AU - Brener, I.

AU - Siegrist, T.

AU - Berkstresser, G. W.

AU - Buchanan, D. N.E.

AU - Hartford, E. H.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - We report the use of ScAlMgO 4 as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO 4 makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO 2 substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO 4.

AB - We report the use of ScAlMgO 4 as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO 4 makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO 2 substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO 4.

UR - http://www.scopus.com/inward/record.url?scp=4043077799&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:4043077799

SN - 1092-5783

VL - 1

JO - MRS Internet Journal of Nitride Semiconductor Research

JF - MRS Internet Journal of Nitride Semiconductor Research

ER -

ScAlMgO ₄: An oxide substrate for GaN epitaxy

Abstract

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