ScAlMgO 4

An oxide substrate for GaN epitaxy

E. S. Hellman, C. D. Brandle, Lynn Schneemeyer, D. Wiesmann, I. Brener, T. Siegrist, G. W. Berkstresser, D. N.E. Buchanan, E. H. Hartford

Research output: Contribution to journalArticleResearchpeer-review

7 Citations (Scopus)

Abstract

We report the use of ScAlMgO 4 as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO 4 makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO 2 substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO 4.

Original languageEnglish
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume1
StatePublished - 1 Dec 1996

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Epitaxial growth
Oxides
Reflection high energy electron diffraction
Substrates
Nitrogen plasma
Crystal growth from melt
Epitaxial films
Molecular beam epitaxy
Structural analysis
Thermal expansion
Photoluminescence
Melting
Energy gap
Diffraction
X rays

Cite this

Hellman, E. S., Brandle, C. D., Schneemeyer, L., Wiesmann, D., Brener, I., Siegrist, T., ... Hartford, E. H. (1996). ScAlMgO 4: An oxide substrate for GaN epitaxy. MRS Internet Journal of Nitride Semiconductor Research, 1.
Hellman, E. S. ; Brandle, C. D. ; Schneemeyer, Lynn ; Wiesmann, D. ; Brener, I. ; Siegrist, T. ; Berkstresser, G. W. ; Buchanan, D. N.E. ; Hartford, E. H. / ScAlMgO 4 : An oxide substrate for GaN epitaxy. In: MRS Internet Journal of Nitride Semiconductor Research. 1996 ; Vol. 1.
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abstract = "We report the use of ScAlMgO 4 as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8{\%}) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO 4 makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO 2 substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO 4.",
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Hellman, ES, Brandle, CD, Schneemeyer, L, Wiesmann, D, Brener, I, Siegrist, T, Berkstresser, GW, Buchanan, DNE & Hartford, EH 1996, 'ScAlMgO 4: An oxide substrate for GaN epitaxy', MRS Internet Journal of Nitride Semiconductor Research, vol. 1.

ScAlMgO 4 : An oxide substrate for GaN epitaxy. / Hellman, E. S.; Brandle, C. D.; Schneemeyer, Lynn; Wiesmann, D.; Brener, I.; Siegrist, T.; Berkstresser, G. W.; Buchanan, D. N.E.; Hartford, E. H.

In: MRS Internet Journal of Nitride Semiconductor Research, Vol. 1, 01.12.1996.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - ScAlMgO 4

T2 - An oxide substrate for GaN epitaxy

AU - Hellman, E. S.

AU - Brandle, C. D.

AU - Schneemeyer, Lynn

AU - Wiesmann, D.

AU - Brener, I.

AU - Siegrist, T.

AU - Berkstresser, G. W.

AU - Buchanan, D. N.E.

AU - Hartford, E. H.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - We report the use of ScAlMgO 4 as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO 4 makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO 2 substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO 4.

AB - We report the use of ScAlMgO 4 as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO 4 makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO 2 substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO 4.

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Hellman ES, Brandle CD, Schneemeyer L, Wiesmann D, Brener I, Siegrist T et al. ScAlMgO 4: An oxide substrate for GaN epitaxy. MRS Internet Journal of Nitride Semiconductor Research. 1996 Dec 1;1.