ScAlMgO4

an oxide substrate for GaN epitaxy

E. S. Hellman, C. D. Brandle, Lynn Schneemeyer, D. Wiesmann, I. Brener, T. Siegrist, G. W. Berkstresser, D. N.E. Buchanan, E. H. Hartford

Research output: Contribution to journalConference articleResearchpeer-review

13 Citations (Scopus)

Abstract

We report the use of ScAlMgO4 as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO4 makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO4 substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO4.

Original languageEnglish
Pages (from-to)51-54
Number of pages4
JournalMaterials Research Society Symposium - Proceedings
Volume395
StatePublished - 1 Jan 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: 26 Nov 19951 Dec 1995

Fingerprint

Epitaxial growth
epitaxy
Oxides
Reflection high energy electron diffraction
oxides
Substrates
boules
Nitrogen plasma
Crystal growth from melt
nitrogen plasma
Epitaxial films
structural analysis
Molecular beam epitaxy
Structural analysis
Thermal expansion
thermal expansion
Photoluminescence
Melting
Energy gap
x ray diffraction

Cite this

Hellman, E. S., Brandle, C. D., Schneemeyer, L., Wiesmann, D., Brener, I., Siegrist, T., ... Hartford, E. H. (1996). ScAlMgO4: an oxide substrate for GaN epitaxy. Materials Research Society Symposium - Proceedings, 395, 51-54.
Hellman, E. S. ; Brandle, C. D. ; Schneemeyer, Lynn ; Wiesmann, D. ; Brener, I. ; Siegrist, T. ; Berkstresser, G. W. ; Buchanan, D. N.E. ; Hartford, E. H. / ScAlMgO4 : an oxide substrate for GaN epitaxy. In: Materials Research Society Symposium - Proceedings. 1996 ; Vol. 395. pp. 51-54.
@article{ef7e3ce10e1d43f2bcc3384b738f7855,
title = "ScAlMgO4: an oxide substrate for GaN epitaxy",
abstract = "We report the use of ScAlMgO4 as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8{\%}) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO4 makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO4 substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO4.",
author = "Hellman, {E. S.} and Brandle, {C. D.} and Lynn Schneemeyer and D. Wiesmann and I. Brener and T. Siegrist and Berkstresser, {G. W.} and Buchanan, {D. N.E.} and Hartford, {E. H.}",
year = "1996",
month = "1",
day = "1",
language = "English",
volume = "395",
pages = "51--54",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

Hellman, ES, Brandle, CD, Schneemeyer, L, Wiesmann, D, Brener, I, Siegrist, T, Berkstresser, GW, Buchanan, DNE & Hartford, EH 1996, 'ScAlMgO4: an oxide substrate for GaN epitaxy', Materials Research Society Symposium - Proceedings, vol. 395, pp. 51-54.

ScAlMgO4 : an oxide substrate for GaN epitaxy. / Hellman, E. S.; Brandle, C. D.; Schneemeyer, Lynn; Wiesmann, D.; Brener, I.; Siegrist, T.; Berkstresser, G. W.; Buchanan, D. N.E.; Hartford, E. H.

In: Materials Research Society Symposium - Proceedings, Vol. 395, 01.01.1996, p. 51-54.

Research output: Contribution to journalConference articleResearchpeer-review

TY - JOUR

T1 - ScAlMgO4

T2 - an oxide substrate for GaN epitaxy

AU - Hellman, E. S.

AU - Brandle, C. D.

AU - Schneemeyer, Lynn

AU - Wiesmann, D.

AU - Brener, I.

AU - Siegrist, T.

AU - Berkstresser, G. W.

AU - Buchanan, D. N.E.

AU - Hartford, E. H.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - We report the use of ScAlMgO4 as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO4 makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO4 substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO4.

AB - We report the use of ScAlMgO4 as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO4 makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO4 substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO4.

UR - http://www.scopus.com/inward/record.url?scp=0029746384&partnerID=8YFLogxK

M3 - Conference article

VL - 395

SP - 51

EP - 54

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -

Hellman ES, Brandle CD, Schneemeyer L, Wiesmann D, Brener I, Siegrist T et al. ScAlMgO4: an oxide substrate for GaN epitaxy. Materials Research Society Symposium - Proceedings. 1996 Jan 1;395:51-54.