ScAlMgO4: an oxide substrate for GaN epitaxy

E. S. Hellman; C. D. Brandle; L. F. Schneemeyer; D. Wiesmann; I. Brener; T. Siegrist; G. W. Berkstresser; D. N.E. Buchanan; E. H. Hartford

ScAlMgO₄: an oxide substrate for GaN epitaxy

E. S. Hellman, C. D. Brandle, L. F. Schneemeyer, D. Wiesmann, I. Brener, T. Siegrist, G. W. Berkstresser, D. N.E. Buchanan, E. H. Hartford

Chemistry and Biochemistry

Research output: Contribution to journal › Conference article › peer-review

24 Scopus citations

Abstract

We report the use of ScAlMgO₄ as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO₄ makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO₄ substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO₄.

Original language	English
Pages (from-to)	51-54
Number of pages	4
Journal	Materials Research Society Symposium - Proceedings
Volume	395
State	Published - 1996
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: 26 Nov 1995 → 1 Dec 1995

Cite this

@article{ef7e3ce10e1d43f2bcc3384b738f7855,

title = "ScAlMgO4: an oxide substrate for GaN epitaxy",

abstract = "We report the use of ScAlMgO4 as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO4 makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO4 substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO4.",

author = "Hellman, {E. S.} and Brandle, {C. D.} and Schneemeyer, {L. F.} and D. Wiesmann and I. Brener and T. Siegrist and Berkstresser, {G. W.} and Buchanan, {D. N.E.} and Hartford, {E. H.}",

year = "1996",

language = "English",

volume = "395",

pages = "51--54",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Fall Meeting ; Conference date: 26-11-1995 Through 01-12-1995",

}

TY - JOUR

T1 - ScAlMgO4

T2 - Proceedings of the 1995 MRS Fall Meeting

AU - Hellman, E. S.

AU - Brandle, C. D.

AU - Schneemeyer, L. F.

AU - Wiesmann, D.

AU - Brener, I.

AU - Siegrist, T.

AU - Berkstresser, G. W.

AU - Buchanan, D. N.E.

AU - Hartford, E. H.

PY - 1996

Y1 - 1996

N2 - We report the use of ScAlMgO4 as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO4 makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO4 substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO4.

AB - We report the use of ScAlMgO4 as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO4 makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO4 substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO4.

UR - http://www.scopus.com/inward/record.url?scp=0029746384&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029746384

SN - 0272-9172

VL - 395

SP - 51

EP - 54

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

Y2 - 26 November 1995 through 1 December 1995

ER -

ScAlMgO₄: an oxide substrate for GaN epitaxy

Abstract

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