ScAlMgO₄: An oxide substrate for GaN epitaxy

Keyphrases

• Band Gap 33%
• Boule 33%
• Congruent Melting 33%
• Czochralski Growth 33%
• Deposition Conditions 33%
• Diffraction 33%
• Epitaxial Film 33%
• Epitaxial Growth 33%
• Epitaxy 33%
• GaN Epitaxy 100%
• GaN Films 33%
• GaN Surface 33%
• In-plane Alignment 33%
• Misfit 33%
• Molecular Beam Epitaxy 33%
• Nitrogen Plasma 33%
• Oxide Substrates 100%
• Photoluminescence 33%
• Reflection High-energy Electron Diffraction 66%
• ScAlMgO4 100%
• Thermal Expansion Measurements 33%

Material Science

• Crystal Growth From Melt 33%
• Epitaxial Film 33%
• Epitaxy 100%
• Film 66%
• Molecular Beam Epitaxy 33%
• Oxide Compound 100%
• Photoluminescence 33%
• Reflection High-Energy Electron Diffraction 66%
• Superlattice 33%
• Thermal Expansion 33%