ScAlMgO₄: an oxide substrate for GaN epitaxy

Keyphrases

• ScAlMgO4 100%
• GaN Epitaxy 100%
• Oxide Substrates 100%
• Reflection High-energy Electron Diffraction 40%
• Band Gap 20%
• Misfit 20%
• Diffraction 20%
• Deposition Conditions 20%
• GaN Surface 20%
• In-plane Alignment 20%
• GaN Films 20%
• Epitaxy 20%
• Czochralski Growth 20%
• Congruent Melting 20%
• Epitaxial Film 20%
• Molecular Beam Epitaxy 20%
• Thermal Expansion Measurements 20%
• Nitrogen Plasma 20%
• Photoluminescence 20%
• Epitaxial Growth 20%
• Boule 20%

Material Science

• Oxide Compound 100%
• Epitaxy 100%
• Film 66%
• Reflection High-Energy Electron Diffraction 66%
• Superlattice 33%
• Photoluminescence 33%
• Thermal Expansion 33%
• Molecular Beam Epitaxy 33%
• Crystal Growth From Melt 33%
• Epitaxial Film 33%