Thermally Activated Dissipation in Bi2.2Sr2Ca0.8Cu2O8+

T. T M Palstra, B. Batlogg, Lynn Schneemeyer, J. V. Waszczak

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Abstract

A new dissipation behavior is reported in superconducting Bi2.2Sr2Ca0.8Cu2O8+ for all temperatures below Tc and all magnetic fields exceeding Hc1. The current-independent electrical resistivity is thermally activated and can be described by an Arrhenius law with a single prefactor and a magnetic-field- and orientation-dependent activation energy U0(H,). This behavior is markedly different from past observations and will be discussed in terms of flux creep and flux flow. This thermally activated behavior implies a finite resistance at all temperatures and all fields exceeding Hc1 determined by the activation energy as the only parameter.

Original languageEnglish
Pages (from-to)1662-1665
Number of pages4
JournalPhysical Review Letters
Volume61
Issue number14
DOIs
StatePublished - 1 Jan 1988

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dissipation
activation energy
magnetic fields
electrical resistivity
temperature

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Palstra, T. T M ; Batlogg, B. ; Schneemeyer, Lynn ; Waszczak, J. V. / Thermally Activated Dissipation in Bi2.2Sr2Ca0.8Cu2O8+. In: Physical Review Letters. 1988 ; Vol. 61, No. 14. pp. 1662-1665.
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Thermally Activated Dissipation in Bi2.2Sr2Ca0.8Cu2O8+. / Palstra, T. T M; Batlogg, B.; Schneemeyer, Lynn; Waszczak, J. V.

In: Physical Review Letters, Vol. 61, No. 14, 01.01.1988, p. 1662-1665.

Research output: Contribution to journalArticleResearchpeer-review

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AU - Waszczak, J. V.

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AB - A new dissipation behavior is reported in superconducting Bi2.2Sr2Ca0.8Cu2O8+ for all temperatures below Tc and all magnetic fields exceeding Hc1. The current-independent electrical resistivity is thermally activated and can be described by an Arrhenius law with a single prefactor and a magnetic-field- and orientation-dependent activation energy U0(H,). This behavior is markedly different from past observations and will be discussed in terms of flux creep and flux flow. This thermally activated behavior implies a finite resistance at all temperatures and all fields exceeding Hc1 determined by the activation energy as the only parameter.

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