Transient electrical response of K0.30MoO3: Effects of isoelectronic dopants

Lynn Schneemeyer, R. M. Fleming, S. E. Spengler

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

In this paper, we examine the variation of threshold fields and the transient response of tungsten- and rubidium- substituted K0.30MoO3. We find that the dc threshold electric field for the onset of nonlinear behavior scales linearly with tungsten concentration, but varies as the square of the rubidium concentration, indicating strong and weak pinning effects, respectively. In tungsten- substituted samples, the threshold field becomes a strong function of frequency in the range 0.01- 1000 Hz. Above a critical frequency which depends on the doping level, the threshold field is proportional to -log (frequency). We interpret these results as a further example of the spin glass- like response of the CDW. Nonlinear conductivity is observed only after the voltage has exceeded the threshold for a finite time interval.

Original languageEnglish
Pages (from-to)505-508
Number of pages4
JournalSolid State Communications
Volume53
Issue number6
DOIs
StatePublished - 1 Jan 1985

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Tungsten
Rubidium
Doping (additives)
thresholds
tungsten
rubidium
Spin glass
Transient analysis
Electric fields
critical frequencies
transient response
spin glass
Electric potential
intervals
conductivity
electric fields
electric potential

Cite this

Schneemeyer, Lynn ; Fleming, R. M. ; Spengler, S. E. / Transient electrical response of K0.30MoO3 : Effects of isoelectronic dopants. In: Solid State Communications. 1985 ; Vol. 53, No. 6. pp. 505-508.
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Transient electrical response of K0.30MoO3 : Effects of isoelectronic dopants. / Schneemeyer, Lynn; Fleming, R. M.; Spengler, S. E.

In: Solid State Communications, Vol. 53, No. 6, 01.01.1985, p. 505-508.

Research output: Contribution to journalArticle

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